regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
feb.1999 mitsubishi semiconductor thyristor ? CR6CM medium power use non-insulated type, glass passivation type CR6CM application switching mode power supply, ecr, regulator for autocycle, motor control ?i t (av) ........................................................................... 6a ?v drm ..............................................................400v/600v ?i gt ..........................................................................10ma unit v v v v v maximum ratings 12 600 720 480 600 480 symbol i t (rms) i t (av) i tsm i 2 t p gm p g (av) v fgm v rgm i fgm t j t stg parameter rms on-state current average on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature weight conditions commercial frequency, sine half wave, 180 conduction, t c =88 c 60hz sine half wave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a a 2 s w w v v a c c g ratings 9.4 6 90 34 5 0.5 6 10 2 C40 ~ +125 C40 ~ +125 2.0 symbol v rrm v rsm v r (dc) v drm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage dc off-state voltage 8 400 500 320 400 320 voltage class type name voltage class 10.5 max 4.5 2.5 2.5 0.8 1.0 f 3.6?.2 1.3 0.5 2.6 12.5 min 3.8 max 16 max 7.0 3.2?.2 4.5 23 1 4 * * measurement point of case temperature outline drawing dimensions in mm to-220 24 1 3 1
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feb.1999 mitsubishi semiconductor thyristor ? CR6CM medium power use non-insulated type, glass passivation type ] 1. the contact thermal resistance r th (c-f) is 1.0 c/w with greased. electrical characteristics test conditions t j =125 c, v rrm applied t j =125 c, v drm applied t c =25 c, i tm =20a, instantaneous value t j =25 c, v d =6v, i t =1a t j =125 c, v d =1/2v drm t j =25 c, v d =6v, i t =1a t j =25 c, v d =12v junction to case ] 1 unit ma ma v v v ma ma c/w typ. 15 symbol i rrm i drm v tm v gt v gd i gt i h r th (j-c) parameter repetitive peak reverse current repetitive peak off-state current on-state voltage gate trigger voltage gate non-trigger voltage gate trigger current holding current thermal resistance limits min. 0.2 max. 2.0 2.0 1.7 1.0 10 3.0 10 0 23 5710 1 80 40 23 5710 2 44 120 160 200 60 20 100 140 180 0 5 01 423 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t c = 125? maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) performance curves
feb.1999 mitsubishi semiconductor thyristor ? CR6CM medium power use non-insulated type, glass passivation type 10 0 5710 1 23 5710 2 23 5 23 5 710 3 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? v fgm = 6v v gt = 1v i gt = 10ma p gm = 5w v gd = 0.2v i fgm = 2a p g(av) = 0.5w 10 2 10 ? 10 0 10 1 7 5 3 2 10 ? 7 5 3 2 10 0 7 5 3 2 7 5 3 2 10 ? 23 57 23 10 ? 57 2 10 ? 10 1 357 2357 16060?0?0 0 2 0 4 0 8 0 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 typical example 160 120 60 40 20 140 100 80 0 80 2467135 q 360 q = 30 60 120 90 180 resistive, inductive loads maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) gate trigger voltage vs. junction temperature gate trigger voltage ( v ) junction temperature (?) allowable case temperature vs. average on-state current (single-phase half wave) case temperature (?) average on-state current (a) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance (?/w) time (s) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (?) 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 120?0 ?0 20 80 0.2 0.5 0.9 060 40 100 typical example distribution 16 12 6 4 2 14 10 8 0 160 4 8 12 14 2610 q = 30 60 120 90 180 q 360 resistive, inductive loads gate characteristics 100 (%) gate trigger current (t j = t?) gate trigger current (t j = 25?)
feb.1999 mitsubishi semiconductor thyristor ? CR6CM medium power use non-insulated type, glass passivation type 23 10 1 5710 2 23 5710 3 23 5710 4 160 0 80 100 120 140 40 60 20 # 2 # 1 t j = 125? typical example i gt (25?) # 1 4.7ma # 2 7.2ma 160 120 60 40 20 140 100 80 0 160?0 0 4 0 8 0 120 140?0 20 60 100 typical example 16 12 6 4 2 14 10 8 0 160 4 8 12 14 2610 q = 30 60 120 90 180 q q 360 resistive loads 160 120 60 40 20 140 100 80 0 160 4 8 12 14 2610 q = 30 120 180 q q 360 60 90 resistive loads 160 120 60 40 20 140 100 80 0 160 4 8 12 14 2610 q = 30 120 180 dc 270 90 60 q 360 resistive, inductive loads 16 12 6 4 2 14 10 8 0 160 4 8 12 14 2610 q = 30 60 120 90 180 270 dc q 360 resistive, inductive loads maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) maximum average power dissipation (rectangular wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (rectangular wave) case temperature (?) average on-state current (a) allowable case temperature vs. average on-state current (single-phase full wave) case temperature (?) average on-state current (a) breakover voltage vs. junction temperature junction temperature (?) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25? ) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/?) 100 (%) breakover voltage ( dv/dt = vv/? ) breakover voltage ( dv/dt = 1v/? )
feb.1999 mitsubishi semiconductor thyristor ? CR6CM medium power use non-insulated type, glass passivation type 50 35 15 10 5 40 45 30 20 25 0 200 4 101418 16 26812 5.0 3.5 1.5 1.0 0.5 4.0 4.5 3.0 2.0 2.5 0 1000 20 50 70 908010 30 40 60 # v d = 100v r l = 16 w t a = 25? typical example i gt (25?) # 5.2ma 160 120 60 40 20 140 100 80 0 160?0 0 4 0 8 0 120 140?0 20 60 100 typical example 10 2 23 10 ? 5710 0 23 5710 1 23 5710 2 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 0.1s tw typical example 80 60 30 20 10 70 50 40 0 1600 40 80 120 14020 60 100 i t = 6a, e di/dt = 5a /s, v d = 300v, dv/dt = 20v/s v r = 50v typical example distribution 16060e20e40 0 20 4 0 8 0 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 typical example distribution holding current vs. junction temperature holding current (ma) junction temperature (?) gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) repetitive peak reverse voltage vs. junction temperature junction temperature (?) turn-on time vs. gate current turn-on time (?) gate current (ma) holding current vs. gate trigger current holding current (ma) gate trigger current (ma) turn-off time vs. junction temperature turn-off time (?) junction temperature (?) 100 (%) repetitive peak reverse voltage (t j = t c ) repetitive peak reverse voltage (t j = 25? )
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